Role of oxygen vacancies in the surface evolution of H at CeO2(111): a charge modification effect.

نویسندگان

  • Xin-Ping Wu
  • Xue-Qing Gong
  • Guanzhong Lu
چکیده

Diffusion processes and reactions of H at stoichiometric and reduced CeO2(111) surfaces have been studied by using density functional theory calculations corrected by on-site Coulomb interactions (DFT + U). Oxygen vacancies on the surface are determined to be able to significantly affect the behavior of H by modifying the charge of surface lattice O through the occurrence of Ce(3+). It has been found that, at the reduced CeO2(111) surface, the adsorption strength of H as well as the H coupling barrier can be dramatically reduced compared to those at the stoichiometric surface, while H2O formation barrier is not significantly affected. Moreover, the diffusion of H at the reduced surface or into the bulk can occur more readily than that at stoichiometric CeO2(111).

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عنوان ژورنال:
  • Physical chemistry chemical physics : PCCP

دوره 17 5  شماره 

صفحات  -

تاریخ انتشار 2015